Elevated source drain devices using silicon selective epitaxial growth

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1244-1250

  Samavedam, S B ^a   Dip, A ^a   Phillips, A M ^a   Tobin, P J ^a   Mihopolous, T ^a   Taylor, W J ^a   Adetutu, O ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON WAFERS;

ELEVATED SOURCE DRAIN (ESD) DEVICES; SELECTIVE EPITAXIAL GROWTH (SEG);

MOSFET DEVICES;

EID: 0034186925     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591369     Document Type: Article

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