Perspectives on giga-bit scaled DRAM technology generation

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 191-206

  Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; LEAKAGE CURRENTS; METALLIZING; THRESHOLD VOLTAGE;

GIGA-BIT SCALED DYNAMIC RANDOM ACCESS MEMORY (DRAM);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0033880334     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00220-6     Document Type: Review

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