High-performance 0.1 μm CMOS with elevated salicide using novel Si-SEG process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 99-102

  Wakabayashi, Hitoshi ^a   Yamamoto, Toyoji ^a   Tatsumi, Toru ^a   Tokunaga, Ken'ichi ^a   Tamura, Takao ^a   Mogami, Tohru ^a   Kunio, Takemitsu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SALICIDE FILMS; SELECTIVE EPITAXIAL GROWTH (SEG) PROCESS;

EPITAXIAL GROWTH; FILM GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

CMOS INTEGRATED CIRCUITS;

EID: 84886448105     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)