Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H2 and Cl2

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 66-68

  Violette, Katherine E ^a   O'Neil, Patricia A ^a   Öztürk, Mehmet C ^a   Christensen, Kim ^a   Maher, Dennis M ^a  

^a Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002734995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116759     Document Type: Article

References (19)

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