Effects of isolation materials on facet formation for silicon selective epitaxial growth

Applied Physics Letters

Volumn 71, Issue 16, 1997, Pages 2328-2330

  Tseng, H C ^a   Chang, C Y ^a   Pan, F M ^b   Chen, J R ^c   Chen, L J ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b National Nana Device Laboratories   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037965742     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120033     Document Type: Article

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