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Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 321-326

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

(5) Amano, C a,b Rudra, A a Grunberg, P a Carlin, J F a Ilegems, M a

a EPFL (Switzerland)

b NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CURRENT DENSITY; ESTIMATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE TREATMENT; TEMPERATURE; TRANSPORT PROPERTIES;

DIFFUSION LENGTH; GROWTH TEMPERATURE; INTERFACET MIGRATION;

SEMICONDUCTOR GROWTH;

EID: 0030193936 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00024-3 Document Type: Article

Times cited : (18)

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