Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition

Journal of Crystal Growth

Volumn 233, Issue 1-2, 2001, Pages 82-87

  Nakahata, Takumi ^a   Yamamoto, Kazuma ^b   Maruno, Shigemitsu ^a   Inagaki, Toru ^b   Sugihara, Kohei ^a   Abe, Yuji ^a   Miyamoto, Atushi ^b   Ozeki, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Air Water Inc   (Japan)

Author keywords

A1. Crystal morphology; A1. Surface processes; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting silicon; B3. Field effect transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; MORPHOLOGY; SILICA; SUBSTRATES; ULTRAHIGH VACUUM;

ULTRA-HIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV-CVD);

SEMICONDUCTING SILICON;

EID: 0035502157     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01581-0     Document Type: Article

References (9)