Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 35-38

  Yamada, T ^a   Samata, S ^a   Takato, H ^a   Matsushita, Y ^a   Hieda, K ^a   Nitayama, A ^a   Horiguchi, F ^a   Masuoka, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; INTEGRATED CIRCUITS, LSI; SEMICONDUCTING SILICON--GROWTH;

DRAM; HIGH-DENSITY LSI; LATERAL GROWTH; SELECTIVE SILICON GROWTH; SHALLOW SOURCE-DRAIN JUNCTION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024870515     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)