Self-aligned contact technology using anisotropical selective epitaxial silicon for giga-bit DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 665-668

  Hada, H ^a   Tatsumi, T ^a   Miyanaga, K ^a   Iwao, S ^a   Mori, H ^a   Koyama, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FABRICATION; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

DYNAMIC RANDOM ACCESS MEMORY; INTERFACIAL CONTACT RESISTANCE; SELF ALIGNED CONTACT PAD FORMATION TECHNOLOGY; ULTRAHIGH VACUUM;

RANDOM ACCESS STORAGE;

EID: 0029520365     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)