Recent developments in the MOCVD and ALD of rare earth oxides and silicates

Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 97-104

  Jones, Anthony C ^a,c   Aspinall, Helen C ^a   Chalker, Paul R ^a   Potter, Richard J ^a   Kukli, Kaupo ^b   Rahtu, Antti ^b   Ritala, Mikko ^b   Leskelä, Markku ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF HELSINKI   (Finland)

^c Epichem Limited   (United Kingdom)

Author keywords

Atomic layer deposition; Lanthanide oxides; Metalorganic chemical vapour deposition

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON TUNNELING; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; GADOLINIUM COMPOUNDS; INSULATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEODYMIUM COMPOUNDS; PERMITTIVITY; SILICA; SILICATES; THERMAL EFFECTS; THIN FILMS;

ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC LAYERS; GATE DIELECTRICS; LANTHANIDE OXIDES;

RARE EARTH ELEMENTS;

EID: 15444373652     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.081     Document Type: Conference Paper

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