Growth of lanthanum silicate thin films by liquid injection MOCVD using tris[bis(trimethylsilyl)amido]lanthanum

Chemical Vapor Deposition

Volumn 9, Issue 1, 2003, Pages 7-10

  Aspinall, Helen C ^a   Williams, Paul A ^b   Gaskell, Jeffrey ^a   Jones, Anthony C ^a   Roberts, John L ^a   Smith, Lesley M ^b   Chalker, Paul R ^a   Critchlow, Gary W ^c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

^c LOUGHBOROUGH UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC INSULATORS; FILM GROWTH; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; SILICA; SILICATES;

DEPOSITION RATES; DIELECTRIC LAYERS; DIELECTRIC OXIDES;

THIN FILMS;

EID: 0012720666     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200290009     Document Type: Article

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