Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon

Materials Research Society Symposium - Proceedings

Volumn 745, Issue , 2002, Pages 197-202

  Van Elshocht, S ^a   Caymax, M ^a   De Gendt, S ^a   Conard, T ^a   Petry J ^a   Claes, M ^a   Witters, T ^a   Zhao, C ^a   Brijs, B ^a   Richard, O ^a   Bender, H ^a   Vandervorst, W ^a   Carter, R ^a   Kluth, J ^c   Date L ^b   Pique, D ^b   Heyns, M M ^a  

^a IMEC   (Belgium)

^b Applied Materials France   (France)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; IMPURITIES; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON;

INTERFACIAL LAYERS;

THIN FILMS;

EID: 0037617759     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-745-n5.15     Document Type: Conference Paper

References (4)

1. International Roadmap for Semiconductors, 2001 edn.
2. A.I. Kingon, J.-P. Maria, and S.K. Streiffer, Nature 406, 1032 (2000).
3. M.M. Heyns, S. Vanhaverbeke, M. Meuris, P.W. Mertens, H. Schmidt, M. Kubota, A. Philiposian, K. Dillenbeck, D. Graf, A.Schneg, and R. De Blank, Mater. Res. Soc., Symp. Proc. 315, 35 (1993).
4. C. Zhao, G. Roebben, M. Heyns, O. Van Der Biest, Key Engineering Materials, Euro Ceramics, p. 1285.