TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode

IEEE Electron Device Letters

Volumn 25, Issue 1, 2004, Pages 13-15

  Lee, Sungjoo ^a   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b The University of Texas at Austin   (United States)

Author keywords

Hafnium oxide; High K gate stack; Metal gate electrode; Reliability

Indexed keywords

CHIP AREA SCALING; CRITICAL DEFECT DENSITY; ELECTRON INJECTION; HAFNIUM OXIDE; METAL GATE ELECTRODES; POLARITY-DEPENDENT RELIABILITY;

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRODES; LEAKAGE CURRENTS; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; WEIBULL DISTRIBUTION;

HAFNIUM COMPOUNDS;

EID: 0347968053     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.821590     Document Type: Article

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