AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 802-807

  Haffouz, S ^a   Tang, H ^a   Bardwell, J A ^a   Hsu, E M ^a   Webb, J B ^a   Rolfe, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Carbon doping; FET; GaN; Heterostructure; MBE

Indexed keywords

ALUMINUM COMPOUNDS; BUFFER CIRCUITS; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY;

CARBON DOPING; DRAIN CURRENTS; ELECTRICAL ISOLATION; GATE LEAKAGE CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 14844304370     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.012     Document Type: Conference Paper

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