2.1 A/mm current density AlGaN/GaN HEMT

Electronics Letters

Volumn 39, Issue 7, 2003, Pages 625-626

  Chini, A ^a   Coffie, R ^b   Meneghesso, G ^a   Zanoni, E ^a   Buttari, D ^b   Heikman, S ^b   Keller, S ^b   Mishra, U K ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; NUCLEATION; POLARIZATION;

LOAD-PULL SYSTEMS;

ALUMINUM COMPOUNDS;

EID: 0345382574     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030382     Document Type: Article

References (5)

1. MISHRA, U.K., PARIKH, P., and WU, Y.: 'AlGaN/GaN HEMTs - An overview of device operation and applications', Proc. IEEE, 2002, 90, (6), pp. 1022-1031
2. HEIKMAN, S., KELLER, S., DENBAARS, S.P., and MISHRA, U.K.: 'Growth Of Fe-doped semi-insulating GaN by metalorganic chemical vapor deposition', Appl. Phys. Lett., 2002, 81, pp. 439-441
3. SMORCHKOVA, I.P., CHEN, L., MATES, T., MORAN, B., KELLER, S., DENBAARS, S.P., SPECK, J.S., and MISHRA, U.K.: 'AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular beam epitaxy', J. Appl. Phys., 2001, 90, pp. 5196-5201
4. VETURY, R., ZHANG, N.-Q., KELLER, S., and MISHRA, U.K.: 'The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs', IEEE Trans. Electron Devices, 2001, 48, pp. 560-566
5. GREEN, B.M., CHU, K.K., CHUMBES, E.M., SMART, J.A., SHEALY, J.R., and EASTMAN, L.F.: 'The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs', IEEE Electron Device Lett., 2000, 21, (6), pp. 268-270