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Volumn 244, Issue 1, 2002, Pages 1-5
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Structure characterization of AlN buffer layers grown on (0 0 0 1) sapphire by magnetron sputter epitaxy
a
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Author keywords
A1. Atomic force microscopy; A1. Crystal structure; A3. Magnetron sputter epitaxy; B1. Nitrides
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Indexed keywords
ALUMINUM NITRIDE;
ATOMIC FORCE MICROSCOPY;
CRYSTAL ORIENTATION;
GALLIUM NITRIDE;
MAGNETRON SPUTTERING;
SAPPHIRE;
SURFACE ROUGHNESS;
TENSILE STRENGTH;
THICKNESS MEASUREMENT;
X RAY DIFFRACTION;
MAGNETRON SPUTTER EPITAXY (MSE);
CRYSTAL GROWTH;
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EID: 0036723332
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)01602-0 Document Type: Article |
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Times cited : (5)
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References (13)
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