Reducing focused ion beam damage to transmission electron microscopy samples

Journal of Electron Microscopy

Volumn 53, Issue 5, 2004, Pages 451-458

  Kato, Naoko I ^a  

^a ITES Co Ltd   (Japan)

Author keywords

Beam damage; Damage reduction; Focused ion beams; Sample preparation; Semiconductor devices; Transmission electron microscopy

Indexed keywords

ARTIFACT; LABORATORY DIAGNOSIS; METHODOLOGY; REVIEW; TRANSMISSION ELECTRON MICROSCOPY;

ARTIFACTS; MICROSCOPY, ELECTRON, TRANSMISSION; SPECIMEN HANDLING;

CHEMICAL CLEANING; DRY ETCHING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

AMORPHIZATIONS; BEAM DAMAGE; DAMAGE REDUCTION; FOCUSED IONS BEAMS; FOCUSED-ION-BEAM SYSTEM; INDUCED DAMAGE; LOWER ENERGIES; SAMPLE PREPARATION; SILICON DEVICES; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

FOCUSED ION BEAMS;

EID: 13444273610     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh080     Document Type: Review

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