Minimizing radiation damage in silicon structured with low energy focused ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 897-900

  Nebiker, P W ^a   Dobeli M ^a   Muhle R ^a   Suter, M ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; GADOLINIUM; GOLD; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; PRASEODYMIUM; RADIATION DAMAGE; SPUTTER DEPOSITION; SURFACE PROPERTIES;

FOCUSED ION BEAMS (FIB);

SEMICONDUCTING SILICON;

EID: 0031547756     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00028-1     Document Type: Article

References (13)

1. J. Orloff, Rev. Sci. Instrum. 64 (1993) 1105.
2. J. Melngailis, J. Vac. Sci. Technol. B 5 (1987) 469.
3. H. Kasahara, H. Sawaragi, R. Aihara, K. Gamo, S. Namba and M. Hassel Shearer, J. Vac. Sci. Technol. B 6 (1988) 974.
4. T. Kosugi, K. Gamo, S. Namba and R. Aihara, J. Vac. Sci. Technol. B 9 (1991) 2660.
5. D. Vetterli, M. Döbeli, R. Mühle, P.W. Nebiker and C.R. Musil, Microelectron. Eng. 27 (1995) 339.
6. F. Machalet, R. Mühle and I. Stiebriz, J. Phys. D: Appl. Phys. 20 (1987) 1414.
7. W. Driesel, Ch. Dietzsch and R.J. Mühle, J. Phys. D: Appl. Phys. 28 (1995) 787.
8. P.W. Nebiker, M. Döbeli, R. Mühle, M. Suter and D. Vetterli, Nucl. Instr. and Meth. B 113 (1996) 205.
9. M. Wagner, H.D. Geiler and P. Kowalski, Laser Optoelektron. 26 (1994) 63.
10. M. Wagner, S. Käpplinger and H.D. Geiler, in: Ion Impl. Technol. 94, ed. S, Coffa, G. Ferla, F. Briolo and E. Rimini (Elsevier, Amsterdam, 1995) p. 634.
11. N. Hecking and E.H. Te Kaat, Appl. Surf. Sci. 43 (1989) 87.
12. E. Meyer and H. Heinzelmann, in: Scanning Tunneling Microscopy II, eds. R. Wiesendanger and H.-J. Güntherodt (Springer, Berlin-Heidelberg, 1992) p. 99.
13. W. Möller, W. Eckstein and J.P. Biersack, Comput Phys. Commun. 51 (1988) 355.