Evidence of depth and lateral diffusion of defects during focused ion beam implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1919-1927

  Vieu, C ^a   Gierak, J ^a   Schneider, M ^a   Ben Assayag, G ^a,b   Marzin, J Y ^a  

^a L2MCNRS ^*  (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1642350818     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590108     Document Type: Article

References (23)

1. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods Phys. Res. B 182/183, 199 (1981).
2. F. Laruelle, A. Bagchi, M. Tsuchiya, J. Merz, and P. M. Petroff, Appl. Phys. Lett. 56, 1561 (1990).
3. H. Kasahara, H. Sawaragi, R. Aihara, K. Gamo, S. Namba, and M. HasselShearer, J. Vac. Sci. Technol. B 6, 974 (1988).
4. R. Germann, A. Forchel, M. Bresch, and H. P. Meier, J. Vac. Sci. Technol. B 7, 1475 (1989).
5. N. G. Stoffel, J. Vac. Sci. Technol. B 10, 651 (1992).
6. D. L. Green, E. L. Hu, and N. G. Stoffel, J. Vac. Sci. Technol. B 12, 3311 (1994).
7. C.-H. Chen, D. L. Green, and E. L. Hu, J. Vac. Sci. Technol. B 13, 2355 (1995).
8. C.-H. Chen, D. L. Green, E. L. Hu, J. P. Ibbetson, and P. M. Petroff, Appl. Phys. Lett. 69, 58 (1996).
9. C.-H. Chen, E. L. Hu, U. K. Mishra, J. P. Ibbetson, X. Wu, and J. S. Speck, Appl. Phys. Lett. 69, 1728 (1996).
10. H. Nakanishi, K. Wada, and W. Walukiewicz, J. Appl. Phys. 78, 5103 (1995).
11. A. Forchel, H. Leier, B. E. Maile, and R. Germann, in Festkörperprobleme, Advances in Solid State Physics, edited by U. Rössler (Vieweg, Braunschweig, 1988), Vol. 28, p. 99.
12. H. Linke, I. Maximov, D. Hessman, P. Emanuelsson, W. Qin, L. Samuelson, and K. B. Meyer, Appl. Phys. Lett. 66, 1403 (1995).
13. Y. Hirayama, S. Tarucha, Y. Suzuki, and H. Okamoto, Phys. Rev. B 37, 2774 (1988).
14. J. Gierak, G. Ben Assayag, M. Schneider, C. Vieu, and J. Y. Marzin, Microelectron. Eng. 30, 253 (1996).
15. H. F. Wong, D. L. Green, T. Y. Liu, D. G. Lishan, M. Bellis, E. L. Hu, P. M. Petroff, P. O. Holtz, and J. L. Merz, J. Vac. Sci. Technol. B 6, 1906 (1988).
16. R. Dingle, C. Weisbuch, H. L. Störmer, H. Morkoç, and A. Y. Cho, Appl. Phys. Lett. 40, 507 (1982).
17. L. W. Swanson, Nucl. Instrum. Methods Phys. Res. 218, 347 (1983).
18. J. Gierak and G. Ben Assayag, Microelectron. Eng. 30, 261 (1996).
19. C. Vieu, A. Claverie, J. Fauré, and J. Beauvillain, Mater. Sci. Eng., B 2, 27 (1989).
20. S. Y. Chiang and G. L. Pearson, J. Appl. Phys. 46, 2986 (1975).
21. C. Vieu, Defect Diffus. Forum 119-120, 127 (1995).
22. C. Vieu, G. Ben Assayag, and J. Gierak, Nucl. Instrum. Methods Phys. Res. B 93, 439 (1994).
23. M. Schneider, J. Gierak, and C. Vieu (unpublished).