Quantitative characterization of roughness at SiO2/Si interfaces by using cross-sectional high-resolution transmission electron microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1278-1285

  Ikarashi, Nobuyuki ^a   Watanabe, Koji ^a  

^a NEC CORPORATION   (Japan)

Author keywords

HREM; Interfacial roughness; SiO2 Si interface

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); PLASMA ETCHING; SEMICONDUCTING SILICON; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL ELECTRON MICROSCOPY; ION MILLING;

SURFACE ROUGHNESS;

EID: 0033734370     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1278     Document Type: Article

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