Simulation of topography evolution and damage formation during TEM sample preparation using focused ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 102-107

  Boxleitner, W ^a   Hobler, G ^a   Kluppel V ^b   Cerva, H ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b SIEMENS AG   (Germany)

Author keywords

Focused ion beam; Ion beam milling; Monte Carlo simulation; Sputtering; Topography simulation

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC CURRENTS; ION BEAMS; MONTE CARLO METHODS; SPUTTERING; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS (FIB); ION BEAM MILLING;

AMORPHOUS SILICON;

EID: 0035303263     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00334-2     Document Type: Conference Paper

References (11)

1. Micrion 2100/2500, Focused ion beam systems