Cross-sectional sample preparation by focused ion beam: A review of ion-sample interaction

Microscopy Research and Technique

Volumn 35, Issue 4, 1996, Pages 320-333

  Ishitani, Tohru ^a   Yaguchi, Toshie ^a  

^a HITACHI LTD   (Japan)

Author keywords

Cross sectioning; Damage; Focused ion beam; Sample preparation; Sputtering; Thinning

Indexed keywords

IONS; RADIATION DAMAGE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL SAMPLE; CROSS-SECTIONING; DAMAGE; FOCUSED IONS BEAMS; POSITIONING ACCURACY; SAMPLE PREPARATION; SCANNING ELECTRONS; SPUTTERING; THINNINGS; TRANSMISSION ELECTRON;

FOCUSED ION BEAMS;

MATHEMATICAL ANALYSIS; PRIORITY JOURNAL; RADIATION INJURY; REVIEW; SCANNING ELECTRON MICROSCOPY; SYSTEM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0030475671     PISSN: 1059910X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0029(19961101)35:4<320::AID-JEMT3>3.0.CO;2-Q     Document Type: Article

References (57)

1. Alani, R., and Swann, P.R. (1992) Precision ion polishing system - A new instrument for TEM specimen preparation of materials. Mat. Res. Soc. Symp. Proc., 254:43-63.
2. Asayama, K., Arakawa, T., Kato, Y., and Shimizu, Y. (1994) Milling characteristics of silicon crystal using focused ion beam. Extended abstracts (50th Symp. Jpn. Soc. Electron Microscopy):51.
3. + focused-ion beam implantation in GaAs. J. Vac. Sci. Technol., 611:2420-2426.
4. Barber, D.J. (1993) Radiation damage in ion-milled specimens: Characteristics, effects and methods of damage limitation. Ultramicroscopy, 52:101-125.
5. Barna, A. (1991) Topographic kinetics and practice of low angle ion beam thinning. Mat. Res. Soc. Symp. Proc., 254:3-22.
6. Barna, A., and Pecz, B. (1991) Simple method for the preparation of InP based samples for TEM investigation. J. Electron Microsc. Tech., 18:325-328.
7. Barr, D.L., Harriott, L.R., and Brown, W.L. (1993) Focused ion beam observation of grain structure and precipitates in aluminum thin film. J. Vac. Sci. Technol., 610:3120-3125.
8. Carter, G., Colligon, J.S., and Nobes, M.J. (1977) Analytical modelling sputter induced surface morphology. Radiat. Effects, 31:65-87.
9. Carter, G., Nobes, M.J., and Katardjiev, I.V. (1993) The theory of ion beam polishing and machining. Vacuum, 44:303-309.
10. Carter, G., Nobes, M.J., Cave, C., and Al-Qadi, N. (1994) Ripple production induced by oblique incidence ion bombardment of Si. Vacuum, 45:71-77.
11. Cullis, A.G., and Chew, N.G. (1991) Ion milling of compound semiconductors for transmission electron microscopy. Mat. Res. Soc. Symp. Proc., 115:3-14.
12. Gamo, K., and Namba, S. (1990) Ion beam assisted etching and deposition. J. Vac. Sci. Technol., B8:1927-1931.
13. 2 etching of materials for phase-shift masks. J. Vac. Sci. Technol., 811:2200-2203.
14. Ishitani, T. (1995) Monte Carlo simulation of ion bombardment at low glancing angles. Jpn. J. Appl. Phys., 34:3303-3306.
15. Ishitani, T., and Kaga, Y. (1995) Calculation of local temperature rise in focused-ion-beam sample preparation. J. Electron Microsc. (Tokyo), 44:331-336.
16. Ishitani, T., and Kawanami, Y. (1995a) Coarse guidelines in designing focused ion beam optics. J. Vac. Sci. Technol., B13:371-374.
17. Ishitani, T., and Kawanami, Y. (1995b) Use of two focusing modes on two-lens focused ion beam column. SPIE Proc., 2522:430-437.
18. Ishitani, T., and Ohnishi, T. (1991) Modeling of sputtering and redeposition in focused-ion-beam trench milling. J. Vac. Sci. Technol., 69:3084-3089.
19. Ishitani, T., Kato, M., and Shimizu, R. (1974) Comments on "The equilibrium topography of sputtered amorphous solids." J. Mater. Sci., 9:505-508.
20. Ishitani, T., Shimase, A., Tamura, H. (1981) Condensation of bombarding gallium ions on a silicon surface. Appl. Phys. Lett., 39:627-628.
21. Ishitani, T., Ohnishi, T., Madokoro, Y., and Kawanami, Y. (1991) Focused-ion-beam "cutter" and "attacher" for micro-machining and device transplantation. J. Vac. Sci. Technol., 89:2633-2637.
22. Ishitani, T., Tsuboi, H., Yaguchi, T., and Koike, H. (1994a) Transmission electron microscope sample preparation using a focused ion beam. J. Electron Microsc. (Tokyo), 43:322-326.
23. Ishitani, T., Hirose, H., and Kamino, T. (1994b) Development of focused ion beam system. Hitachi Instrument News (Electron Microscopy Edition; 26th Edition):24-29.
24. Ishitani, T., Hirose, H., and Tsuboi, H. (1995) Focused-ion-beam digging of biological specimens. J. Electron Microsc. (Tokyo), 44:110-114.
25. Ishitani, T., Yaguchi, T., and Koike, H. (1996) Focused ion beam system for TEM sample preparation. Hitachi Rev., 45:19-24.
26. Kanaya, K., Baba, N., Muranaka, Y., and Adachi, K. (1986) Application of ion beam sputtering for high-resolution electron microscopy. J. Electron Microsc. Tech., 4:1-19.
27. Kim, M.J., and Carpenter, R.W. (1987) TEM specimen heating during ion beam thinning: Microstructural instability. Ultramicroscopy, 21:327-334.
28. Kirk, E.C.G., Williams, D.A., and Ahmed, H. (1989) Cross-sectional transmission electron microscopy of precisely selected regions from semiconductor devices. Inst. Phys. Conf. Ser., 100:501-506.
29. Kitano, Y., Fujiwara, Y., Takeshita, H., Kamino, T., Yaguchi, T., Matsumoto, H., and Koike, H. (1995) TEM observation of mechanically alloyed powder particles (MAPP) of Mg-Zn alloy thinned by the FIB cutting technique. J. Electron Microsc. (Tokyo), 44:410-413.
30. Kosugi, T., Iwase, H., and Gamo, K. (1993) Characteristics of ion beam assisted etching of GaAs: Surface stoichiometry. J. Vac. Sci. Technol., 811:2214-2218.
31. Melngailis, J. (1991) Focused ion beam induced deposition - A review. SPIE Proc., 1465:36-49.
32. Nakajima, K., Sudo, S., Yakushiji, M., Ishii, T., and Aoki, S. (1993) Layer structure evaluation of multilayer X-ray mirror by combination focused ion beam etching and transmission electron microscopy. J. Vac. Sci. Technol., 811:2027-2029.
33. Neureuther, A.R., Liu, C.Y., and Ting, C.H. (1979) Modeling ion milling. J. Vac. Sci. Technol., 16:1767-1771.
34. Nikawa, N. (1991) Applications of focused ion beam technique to failure analysis of very large scale integrations: Review. J. Vac. Sci. Technol., 69:2566-2577.
35. Oechsner, H. (1975) Sputtering - A review of some recent experimental and theoretical aspects. Appl. Phys., 8:185-198.
36. Overwijk, M.H.F., Heuel, F.C., and Bulle-Liewma, C.W.T. (1993) Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam. J. Vac. Sci. Technol., B11: 2021-2024.
37. Pecz, B., and Barna, A. (1994) Reactive ion milling - Thinning of compound semiconductors. Vacuum, 45:1-3.
38. Pellerin, J.G., Griffis, D.P., and Russell, P.E. (1990) Focused ion beam machining of Si, GaAs, and InP. J. Vac. Sci. Technol., B8:1945-1950.
39. Ryssel, H., and Ruge, I., eds. (1986) Ion Implantation. John Wiley & Sons, New York, pp. 91-94.
40. Saka, H., and Nagaya, G. (1995) Plan-view transmission electron microscopy observation of a crack tip in silicon. Phil. Mag. Lett., 72: 251-255.
41. Steve, F.A., Shane, T.C., Kahora, P.M., Hull, R., Bahnck, D., Kannan, V.C., and David, E. (1995) Applications of focused ion beams in microelectronics production, design and development. Surf. Interface Anal., 23:61-68.
42. 2 etching. J. Appl. Phys., 68:2392-2399.
43. Szot, J., Hornsey, R., Ohnishi, T., and Minagawa, S. (1992) Focused ion beam micromachining for transmission electron microscopy sample preparation of semiconductor laser diodes. J. Vac. Sci. Technol., 610:575-579.
44. Tamura, M. (1991) Damage formation and annealing of ion implantation in Si. Mater. Sci. Rep., 6:141-214.
45. Tamura, M., Shukuri, S., and Moniwa, M. (1986) Focused ion beam gallium implantation into silicon. Appl. Phys., A39:183-190.
46. Tarutani, M., Takai, Y., and Shimizu, R. (1992) Application of the focused-ion-beam technique for preparing the cross-sectional sample of chemical vapor deposition diamond thin film for high resolution transmission electron microscope observation. Jpn. J. Appl. Phys., 31:L1305-L1308.
47. Tsuboi, H., Yaguchi, T., Koike, H., and Ishitani, T. (1994) Focused ion beam milling system (FB-2000) and its application. Hitachi technical data FIB No. 1 (in Japanese).
48. Xu, X., Ratta, A.D.D., Sosonkina, J., and Melngailis, J. (1992) Focused ion beam induced deposition and ion milling as a function of angle of ion incidence. J. Vac. Sci. Technol., 610:2675-2680.
49. Yabuuchi, Y. (1993) New TEM specimen preparation method using a focused ion beam. Electron Microsc., 28:119-121 (in Japanese).
50. Yaguchi, T., Tuboi, H., Kamino, T., Ishitani, T., and Koike, H. (1994) Cross-sectional TEM sample preparation of galvanized steel using focused ion beam and its analysis. Hitachi technical data FIB No. 2 (in Japanese).
51. Yamaguchi, H. (1987) Line dose dependence of silicon and gallium arsenide removal by a focused gallium ion beam. J. Physique, 48: 165-170.
52. Yamaguchi, A., and Nishikawa, T. (1995) Low-damage specimen preparation technique for transmission electron microscopy using iodine gas-assisted focused ion beam milling. J. Vac. Sci. Technol., B13:962-966.
53. Yamaguchi, H., Shimase, A., Haraichi, S., and Miyauchi, T. (1985) Characteristics of silicon removal by fine focused gallium ion beam. J. Vac. Sci. Technol., B3:71-74.
54. Yamaguchi, A., Shibata, M., and Hashinaga, T. (1993) Transmission electron microscopy sample preparation technique using focused ion beam fabrication: Application to GaAs metal-semiconductor field effect transistor. J. Vac. Sci. Technol., 811:2016-2020.
55. Yamamura, Y., Mossener, C., and Oechsner, H. (1987) Angular distributions of sputtered atoms from ion-bombarded surfaces. Radiat. Effects, 105:31-41.
56. Young, R.J., Dingle, T., Robinson, K., and Pugh, P.J.A. (1993a) An application of scanned focused ion beam milling to studies on the internal morphology of small arthropods. J. Microsc., 172:81-88.
57. Young, R.J., Cleaver, J.R.A., and Ahmed, H. (1993b) Characteristics of gas-assisted focused ion beam etching. J. Vac. Sci. Technol., B11: 234-241.