Photoreflectance of Cu-based I-III-VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 79, Issue 4, 1996, Pages 2043-2054

  Shirakata, Sho ^a   Chichibu, Shigefusa ^b  

^a EHIME UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; CURVE FITTING; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRESSES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BROADENING PARAMETER; CHALCOPYRITES; CRYSTAL FIELD SPLITTING; CRYSTAL QUALITY; PHOTOREFLECTANCE SPECTROSCOPY; SPIN ORBIT SPLITTING; THIRD DERIVATIVE FUNCTIONAL FORM; TRANSITION ENERGY;

COPPER COMPOUNDS;

EID: 0030081126     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361059     Document Type: Article

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