Optical transitions in InxGa1-xN alloys grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 69, Issue 22, 1996, Pages 3315-3317

  Shan, W ^a   Little, B D ^a   Song, J J ^a   Feng, Z C ^b   Schurman, M ^b   Stall, R A ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b EMCORE Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; COMPOSITION EFFECTS; ELECTRON TRANSPORT PROPERTIES; EMISSION SPECTROSCOPY; ENERGY GAP; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; THERMAL EFFECTS;

CARRIER RECOMBINATION; DECAY TIME; INDIUM GALLIUM ARSENIDE; PHOTOREFLECTANCE; TIME RESOLVED LUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030288329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117291     Document Type: Article

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