0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2001, Pages 147-150

  Schuegraf, K ^a   Racanelli, M ^a   Kalburge, A ^a   Shen, B ^a   Hu, C ^a   Chapek, D ^a   Howard, D ^a   Quon, D ^a   Feiler, D ^a   Dornisch, D ^a   U'Ren, G ^a   Abdul Ridha, H ^a   Zheng, J ^a   Zhang, J ^a   Bell, K ^a   Ring, K ^a   Yin, K ^a   Joshi, P ^a   Akhtar, S ^a   Lee, T ^a   Kempf, P ^a   more..

^a Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CAPACITORS; ELECTRIC NETWORK ANALYSIS; THIN FILMS; WIRELESS TELECOMMUNICATION SYSTEMS;

BICMOS TECHNOLOGY; METAL INSULATOR METAL CAPACITORS;

CMOS INTEGRATED CIRCUITS;

EID: 0035167280     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)