A new "mixed-mode" base current degradation mechanism in bipolar transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 32-35

  Zhang, Gang ^a   Cressler, John D ^b   Niu, Guofu ^a   Joseph, Alvin J ^c  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRAPS; IMPACT IONIZATION; LEAKAGE CURRENTS; STRESS ANALYSIS; TRANSISTORS;

MIXED-MODE STRESS;

BIPOLAR TRANSISTORS;

EID: 0036442474     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. U. Gogineni et al., IEEE Trans. Elect. Dev., vol. 47, pp. 1440-1448, 2000.
2. M.S. Carroll et al., IEEE Trans. Elect. Dev., vol. 44, pp. 110-117, 1997.
3. D. Ahlgren et al., Proc. IEEE BCTM, pp. 195-197, 1997.
4. A.J. Joseph et al., Tech. Deg. Of ISSCC, pp. 180, 2002.
5. J.D. Cressler et al., IEEE Trans. Nucl. Sci., vol. 48, pp. 2238-2243, 2001.
6. J.A. Babcock et al., IEEE Trans. Elect. Dev., vol. 16, pp. 351-353, 1995.
7. J.D. Cressler et al., IEEE NSREC, to appear, 2002.
8. G. Freeman et al., Tech. Dig. IEEE IEDM, pp.569-572, 1999.