Reliability and failure criteria for AlInAs/GaInAs/InP HBTs

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 294-297

  Kiziloğlu, Kürşad ^a,b   Thomas, Stephen ^a   Williams, F ^a   Paine, Bruce M ^a,c  

^a Hughes Aircraft Co   (United States)

^b Cognet Microsystems ^*  (United States)

^c BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM INDIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; MEDIAN-TIME-TO-FAILURE (MTTF);

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; FAILURE ANALYSIS; HETEROJUNCTIONS; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; STRESS ANALYSIS; THERMAL EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033702241     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2000.850290     Document Type: Article

References (7)

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