Impact of inter metal dielectric on the reliability of SiGe NPN HBTs after high temperature electrical operation

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn , Issue , 2003, Pages 126-129

  Hoftnann, K ^a   Bruegmann, G ^a   Seck, M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Dielectrics; Germanium silicon alloys; Iron; Passivation; Planarization; Plasma density; Plasma temperature; Silicon germanium; Space charge; Stress

Indexed keywords

AMPLIFICATION; BICMOS TECHNOLOGY; DIELECTRIC MATERIALS; ELECTRIC SPACE CHARGE; GERMANIUM; GERMANIUM ALLOYS; INTEGRATED CIRCUITS; IRON; PASSIVATION; PLASMA DENSITY; POLYCRYSTALLINE MATERIALS; SILICON; SILICON ALLOYS; SILICON OXIDES; SPIN GLASS; STRESSES;

AFTER HIGH TEMPERATURE; GERMANIUM SILICON ALLOY; INTER-METAL DIELECTRICS; PLANARIZATION; PLASMA TEMPERATURE; RECOMBINATION CENTERS; SILICON GERMANIUM; SPACE CHARGE REGIONS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 84942337310     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2003.1196686     Document Type: Conference Paper

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