Heteroepitaxy of GaN on Si(111)

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 2002, Pages 41-47

  Krost, A ^a   Dadgar, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRACKS; CRYSTAL LATTICES; ELECTRON DEVICES; EPITAXIAL GROWTH; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MULTILAYERS; OPTOELECTRONIC DEVICES; REACTION KINETICS; SEMICONDUCTING SILICON;

CHEMICAL REACTIVITY; GALLIUM FREE SEED LAYERS ALUMINUM NITRIDE; LOW TEMPERATURE ALUMINUM NITRIDE INTERLAYERS; THERMAL MISMATCH;

GALLIUM NITRIDE;

EID: 1042266091     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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