GaN MESFETs on (111) Si substrate grown by MOCVD

Electronics Letters

Volumn 36, Issue 21, 2000, Pages 1816-1818

  Egawa, T ^a   Nakada, N ^a   Ishikawa, H ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

DRAIN-SOURCE CURRENTS;

MESFET DEVICES;

EID: 0034297273     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001282     Document Type: Article

References (6)

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2. OSINSKY, A., GANGOPADHYAY, S., YANG, J.W., GASKA, R., KUKSENKOV, D., TEMKIN, H., SHMAGIN, I.K., CHANG, Y.C., MUTH, J.F., and KOLBAS, R.M.: 'Visible-blind GaN Schottky barrier detectors grown on Si(111)', Appl. Phys. Lett., 1998, 72, pp. 551-553
3. SCHREMER, A.T., SMART, J.A., WANG, Y., AMBACHER, O., MACDONALD, N.C., and SHEALY, J.R.: 'High electron mobility AlGaN/GaN heterostructure on (111)Si', Appl. Phys. Lett., 2000, 76, pp. 736-738
4. ISHIKAWA, H., ZHAO, G.-Y., NAKADA, N., EGAWA, T., JIMBO, T., and UMENO, M.: 'GaN on Si substrate with AlGaN/AlN intermediate layer', Jpn. J. Appl. Phys., 1999, 38, pp. L492-L494
5. 2 by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1991, 58, pp. 1265-1267
6. GASKA, R., OSINSKY, A., YANG, J.W., and SHUR, M.S.: 'Self-heating in high-power AlGaN-GaN HFET's', IEEE Electron Device Lett., 1998, 19, pp. 89-91