Thermal stability of GaN on (1 1 1) Si substrate

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 178-182

  Ishikawa, Hiroyasu ^a   Yamamoto, Kensaku ^a   Egawa, Takashi ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ga droplets; Low temperature grown GaN (LT GaN); Meltback etching; Si substrate; Thermal stability

Indexed keywords

ANNEALING; ETCHING; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY ANALYSIS;

ENERGY DISPERSIVE X RAY (EDX) ANALYSIS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092590     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00223-1     Document Type: Article

References (4)

1. A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu, I. Akasaki, J. Crystal Growth 128 (1993) 391.
2. S. Ohkoshi, Y. Iijima, T. Nagatomo, O. Ohmoto, in: Tenth Record of Alloy Semicond. Physics and Electron. Symp., Nagoya, 1991, p. 157.
3. N.R. Perkins, M.N. Horton, Z.Z. Bandic, T.C. McGill, T.F. Kuech, Mater. Res. Soc. Proc. 395 (1996) 243.
4. T.F. Ciszek, T.H. Wang, R.W. Burrows, X. Wu, J. Crystal Growth 128 (1993) 314.