InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 528-530

  Egawa, T ^a   Zhang, B ^a   Nishikawa, N ^a   Ishikawa, H ^a   Jimbo, T ^a   Umeno, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; GREEN LEDS; INTERMEDIATE LAYERS; OPERATING VOLTAGE; OPTICAL OUTPUT POWER; PEAK EMISSION WAVELENGTH; SERIES RESISTANCES; SI(111) SUBSTRATE; STABLE OPERATION;

ELECTRIC RESISTANCE; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SILICON; VAPORS;

LIGHT EMITTING DIODES;

EID: 0036139359     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1408264     Document Type: Article

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