GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 PART 2, 1999, Pages 492-494

  Ishikawa, Hiroyasu ^a   Zhao, Guang Yuan ^a   Nakada, Naoyuki ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Intermediate layer; Meltback etching; MOCVD; Si substrate

Indexed keywords

EID: 0000070228     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. M. Akiyama, Y. Kawarada and K. Kaminishi: Jpn. J. Appl. Phys. 23 (1984) L843.
2. T. Soga, T. Imori and M. Umeno: Mater. Res. Soc. Symp. Proc. 91 (1987) 69.
3. N. Noto, S. Nozaki, T. Egawa, T. Soga, T. Jimbo and M. Umeno: Mater. Res. Soc. Symp. Proc. 148 (1989) 248.
4. T. Egawa, H. Tada, Y. Kobayashi, T. Soga, T. Jimbo and M. Umeno: Appl. Phys. Lett. 57 (1990) 1179.
5. A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki: J. Cryst. Growth 128 (1993) 391.
6. S. Ohkoshi, Y. Iijima, T. Nagatomo and O. Ohmoto: Tenth Record of Alloy Semiconductor Physics and Electronics Symp., Nagoya, 1991, p. 157.
7. T. Takeuchi, H. Amano, K. Hiramatsu, N. Sawaki and I. Akasaki: J. Cryst. Growth 115 (1991) 634.
8. N. R. Perkins, M. N. Horton, Z. Z. Bandic, T. C. McGill and T. F. Kuech: Mater. Res. Soc. Symp. Proc. 395 (1996) 243.
9. N. P. Kobayashi, J. T. Kobayashi, W. Choi, P. D. Dapkus, X. Zhang and D. H. Rich: J. Cryst. Growth 189/190 (1998) 172.
10. Y. Kawaguchi, Y. Honda, H. Matsushima, M. Yamaguchi, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 37 (1998) L966.
11. H. Ishikawa, K. Yamamoto, T. Egawa, T. Soga, T. Jimbo and M. Umeno: J. Cryst. Growth 189/190 (1998) 178.
12. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi and K. Oki: J. Cryst. Growth 115 (1991) 628.
13. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) 1620.
14. T. Egawa, S. Nozaki, T. Soga, T. Jimbo and M. Umeno: Appl. Phys. Lett. 58 (1990) 1265.
15. H. Ishikawa, K. Nakamura, T. Egawa, T. Jimbo and M. Umeno: Jpn. J. Appl. Phys. 37 (1998) L7.