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Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1191-1197

Enhanced photoluminescence from GaN grown by lateral confined epitaxy

(5) Zamir, S a Meyler, B a Salzman, J a Wu, F b Golan, Y b

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

b BEN GURION UNIVERSITY OF THE NEGEV (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND PHOTOLUMINESCENCE; CRACK DENSITY; CRACK FREE; CRITICAL SIZE; GROWTH PATTERNS; HIGH-QUALITY MATERIALS; INTERNAL REFLECTIONS; LATERAL DIMENSION; LIGHT-EXTRACTION EFFICIENCY; LUMINESCENCE EFFICIENCIES; MICROCAVITY EFFECTS; PL INTENSITY; SHAPE EFFECT; SI SUBSTRATES; THERMAL CRACKS; THREADING DISLOCATION DENSITIES;

CRACKS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SILICON;

GALLIUM NITRIDE;

EID: 0036469569 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1432115 Document Type: Article

Times cited : (16)

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