Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 7 B, 2001, Pages

  Feltin, E ^a   Dalmasso, S ^a   De Mierry, P ^a   Beaumont, B ^a   Lahreche H ^a   Bouille A ^a   Haas, H ^a   Leroux, M ^a   Gibart, P ^a  

^a CRHEA CNRS   (France)

Author keywords

Electroluminescence; InGaN; LED; MOVPE; Si (111)

Indexed keywords

ELECTROLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ACTIVE LAYERS;

LIGHT EMITTING DIODES;

EID: 0035878249     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l738     Document Type: Article

References (16)