Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1957-1961

  Tsuchiya, Yoshishige ^a   Endoh, Masato ^a   Kurosawa, Masatoshi ^b   Tung, Raymond T ^a   Hattori, Takeo ^b   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

High k dielectric thin film; In situ monitoring of film growth; Pulsed source MOCVD; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; FILM GROWTH; INTERFACES (MATERIALS); LASER PULSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PERMITTIVITY; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; THIN FILMS; YTTRIUM COMPOUNDS;

CAPACITANCE EQUIVALENT THICKNESS; CHEMICAL STABILITY; DIKETONATE; PULSED SOURCE METAL ORGANIC CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ELLIPSOMETRY;

DIELECTRIC FILMS;

EID: 0038348024     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1957     Document Type: Article

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