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Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 7, 1996, Pages 3993-3999

Oxidation rate and surface-potential variations of silicon during plasma oxidation

(4) Kitajima, M a Kamioka, I a Nakamura, K a Hishita, S a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001158058 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.53.3993 Document Type: Article

Times cited : (20)

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