IR-electroded BST thin film capacitors for 1 giga-bit DRAM application

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 679-682

  Chen, Tung Sheng ^a   Hadad, Daniel ^a   Balu, Venkatasubramani ^a   Jiang, Bo ^a   Kuah, Shao Hong ^a   McIntyre, Paul C ^b   Summerfelt, Scott R ^b   Anthony, J Mark ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; THIN FILM CIRCUITS; ANNEALING; BARIUM COMPOUNDS; HYDROGEN; IRIDIUM; LEAKAGE CURRENTS; PLATINUM; POLARIZATION; RANDOM ACCESS STORAGE; THIN FILM DEVICES;

DYNAMIC RANDOM ACCESS MEMORY; ELECTRICAL CHARACTERISTIC; ELECTRODE MATERIAL; FORMING GAS; GIGAS; HYDROGEN DAMAGES; LOW LEAKAGE; THIN-FILM CAPACITORS; TIO;

THIN FILMS; CAPACITORS;

BARIUM STRONTIUM TITANATE; DYNAMIC RANDOM ACCESS MEMORIES; GAS ANNEALS; THIN FILM CAPACITORS;

EID: 0030382689     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554072     Document Type: Conference Paper

References (8)

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