Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 327-330

  Degraeve, R ^a   Kaczer, B ^a   Houssa, M ^a   Groeseneken, G ^a   Heyns, M ^a   Jeon, J S ^a   Halliyal, A ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; EXTRAPOLATION; GATES (TRANSISTOR); INTERFACES (MATERIALS); PERMITTIVITY; SILICA; STATISTICAL METHODS; TANTALUM COMPOUNDS; WEIBULL DISTRIBUTION;

CONSTANT CURRENT STRESS; CONSTANT VOLTAGE STRESS; TANTALUM OXIDES; TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME TO BREAKDOWN;

ELECTRIC BREAKDOWN;

EID: 0033314629     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)