Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 39-41

  Lee, B H ^a   Choi, R ^a   Kang, L ^a   Gopalan, S ^a   Nieh, R ^a   Onishi, K ^a   Jeon, Y ^a   Qi, W J ^a   Kang, C ^a   Lee, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRODES; HAFNIUM COMPOUNDS; TANTALUM COMPOUNDS;

GATE DIELECTRIC THIN FILMS;

MOSFET DEVICES;

EID: 0034453465     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Gate dielectric and MOS VLSIs