Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5574-5583

  Senez, Vincent ^a,g   Armigliato, Aldo ^b   De Wolf, Ingrid ^c   Carnevale, Gianpietro ^d   Balboni, Roberte ^b   Frabboni, Stefano ^e   Benedett, Alessandro ^c,f  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b CNR   (Italy)

^c IMEC   (Belgium)

^d STMICROELECTRONICS   (Italy)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^f UNIVERSITY OF SHEFFIELD   (United Kingdom)

^g INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELASTOPLASTICITY; ELECTRON DIFFRACTION; MICROSTRUCTURE; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; STRAIN;

SHALLOW TRENCH ISOLATION (STI); SUBMICRON DEVICES;

SILICON;

EID: 0242636927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611287     Document Type: Article

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