3-Dimensional Simulation of Thermal Diffusion and Oxidation Processes

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 705-708

  Senez, Vincent ^a   Bozeka, Sébastien ^a   Baccus, Bruno ^b  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b MEMC Electronic Materials   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ARSENIC; BORON; CRYSTAL IMPURITIES; ELECTRIC FIELDS; FINITE ELEMENT METHOD; OXIDATION; SILICON; THERMAL DIFFUSION; THREE DIMENSIONAL; ULSI CIRCUITS;

3-D PROBLEMS; 3-DIMENSIONAL; 3D PROCESS; DIFFUSION AND OXIDATION; DIFFUSION PROCESS; OXIDATION PROCESS; PROCESS SIMULATION PROGRAM; PROCESS SIMULATIONS; SIMULATION SYSTEMS; ULSI DEVICES;

OXIDATION; COMPUTER SIMULATION;

CHARGE STATES; DOPING IMPURITIES; FAIR-TSAI MODEL;

EID: 0030398052     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554078     Document Type: Conference Paper

References (9)

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