Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

Applied Surface Science

Volumn 188, Issue 1-2, 2002, Pages 214-218

  Benedetti, A ^a   Cullis, A G ^a   Armigliato, A ^b   Balboni, R ^b   Frabboni, S ^c   Mastracchio, G F ^d   Pavia, G ^d  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b CNR   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

Convergent beam electron diffraction; Salicidation; Shallow trenches; Strain; Transmission electron microscopy

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON DIFFRACTION; MICROSCOPES; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); TENSILE STRAIN;

STRAIN MEASUREMENT;

EID: 0037070659     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00750-4     Document Type: Article

References (7)