Mechanical analysis of interconnected structures using process simulation

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 6039-6049

  Senez, Vincent ^a,c   Hoffmann, Thomas ^a   Le Duc, Philippe ^b   Murray, Frank ^b  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; COMPRESSIVE STRENGTH; COMPUTER AIDED DESIGN; ELASTOPLASTICITY; FINITE ELEMENT METHOD; MICROELECTRONICS; SILICON WAFERS; TENSILE STRENGTH; THIN FILMS; VISCOELASTICITY;

INTERCONNECTED STRUCTURES;

POLYCRYSTALLINE MATERIALS;

EID: 0038651066     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569977     Document Type: Article

References (43)

1. R. E. Jones and M. L. Basehore, Appl. Phys. Lett. 50, 725 (1987).
2. M. S. Kilijanski and Y. L. Shen, Microelectron. Reliab. 42, 259 (2002).
3. P. Ferreira, V. Senez, and B. Baccus, IEEE Trans. Electron Devices 43, 1525 (1995).
4. T. Hoffmann, P. Le Duc, and V. Senez, J. Vac. Sci. Technol. B 17, 2603 (1999).
5. V. Senez, T. Hoffmann, and A. Tixier, IEEE Trans. Semicond. Manuf. 13, 416 (2000).
6. V. Senez and T. Hoffmann, Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2001, p. 58.
7. O. C. Zienkiewicz, S. Valliapan, and I. P. King, Int. J. Numer. Methods Eng. 1, 75 (1969).
8. J. C. Simo and R. L. Taylor, Comput. Methods Appl. Mech. Eng. 48, 101 (1985).
9. A. Perez-Foguet and F. Armero, Int. J. Numer. Methods Eng. 53, 331 (2002).
10. P. R. Besser, T. M. Marieb, J. Lee, P. A. Flinn, and J. C. Bravman, J. Mater. Res. 11, 184 (1996).
11. M. Murakami and P. Chaudhari, Thin Solid Films 46, 109 (1977).
12. T. Hosoda, H. Niwa, H. Yagi, and H. Tsuchikawa, Proceedings of the IEEE International Reliability Physics Symposium (IRPS), Vol. 29, p. 77 (1991).
13. I. S. Yeo, P. S. Ho, and S. H. Anderson, J. Appl. Phys. 78, 945 (1995).
14. I. S. Yeo, S. H. Anderson, P. S. Ho, and C. K. Hu, J. Appl. Phys. 78, 953 (1995).
15. D. Jawarani, H. Kawasaki, I. S. Yeo, L. Rabenberg, J. P. Stark, and P. S. Ho, J. Appl. Phys. 82, 1563 (1997).
16. A. Witvrouw, J. Proost, Ph. Roussel, P. Cosemans, and K. Maex, J. Mater. Res. 14, 1246 (1999).
17. H. Niwa, H. Yagi, H. Tsuchikawa, and M. Kato, J. Appl. Phys. 68, 328 (1990).
18. M. A. Korhonen, R. D. Black, and C. Y. Li, J. Appl. Phys. 69, 1748 (1991).
19. A. Wikstrom, P. Gudmundson, and S. Suresh, J. Appl. Phys. 86, 6088 (1999).
20. B. Greenebaum, A. I. Sauter, P. A. Flinn, and W. D. Nix, Appl. Phys. Lett. 58, 1845 (1991).
21. A. I. Sauter and W. D. Nix, IEEE Trans. Compon., Hybrids, Manuf. Technol. 15, 594 (1992).
22. Y. L. Shen, J. Appl. Phys. 82, 1578 (1997).
23. Y. L. Shen, J. Mater. Res. 12, 2219 (1997).
24. J. Lee and A. S. Mack, IEEE Trans. Semicond. Manuf. 11, 458 (1998).
25. Y. L. Shen, IEEE International Reliability Physics Symposium Vol. 37, p. 283 (1999).
26. Y. L. Shen, J. Appl. Phys. 84, 5525 (1998).
27. J. A. Floro, E. Chason, R. C. Cammarata, and D. J. Srolovitz, MRS Bull. 27, 19 (2002).
28. N. Nagasima, H. Suzuki, K. Tanaka, and S. Nishida, J. Electrochem. Soc. 121, 434 (1974).
29. M. Yoshimaru and H. Matsuhashi, J. Electrochem. Soc. 143, 3032 (1996).
30. O. W. Scherer, J. Non-Cryst. Solids 215, 155 (1997).
31. C. Yu and Y. Chang, Jpn. J. Appl. Phys. 37, 2057 (1998).
32. J. Zhao, I. Malik, T. Ryan, E. Ogawa, P. Ho, W. Shih, A. J. Kerrow, and K. Taylor, Appl. Phys. Lett. 74, 944 (1999).
33. Y. K. Siew, G. Sarkar, X. Hu, J. Hui, A. See, and C. Chua, J. Electrochem. Soc. 147, 335 (2000).
34. P. Ambrée, F. Kreller, R. Wolf, and K. Wandel, J. Vac. Sci. Technol. B 11, 614 (1993).
35. K. Ramkumar, S. Ghosh, and A. Saxena, J. Electrochem. Soc. 140, 9 (1993).
36. S. Nag, A. Chatterjee, K. Taylor, I. Alis, S. O'Brien, S. Aur, J. Luttmer, and I. Chen, Tech. Dig. - Int. Electron Devices Meet. 1996, 841.
37. D. E. Bornside, J. Electrochem. Soc. 137, 2589 (1990).
38. S. Hirasawa, Y. Saito, H. Nezu, N. Ohashi, and H. Maruyama, IEEE Trans. Semicond. Manuf. 10, 438 (1997).
39. V. Senez, D. Collard, P. Ferreira, and B. Baccus, IEEE Trans. Electron Devices 43, 720(1996).
40. D. S. Gardner and P. A. Flinn, IEEE Trans. Electron Devices 35, 2160 (1988).
41. P. Le Duc, Ph.D. dissertation, IEMN Labs, Lille University 1999.
42. G. G. Stoney, "The tension of metallic films deposited by electrolysis" in Proceedings of the Royal Society London, Vol. A82, p. 172, 1909.
43. S. Chaudhry et al., Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 1998, p. 332.