Stress analysis of shallow trench isolation for 256MDRAM and beyond

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 141-144

  Kuroi, T ^a   Uchida, T ^a   Horita, K ^a   Sakai, M ^a   Itoh, Y ^a   Inoue, Y ^a   Nishimura, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DYNAMIC RANDOM ACCESS STORAGE; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR STORAGE; STRESS ANALYSIS; THERMOOXIDATION;

SHALLOW TRENCH ISOLATION (STI);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032276825     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)