Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 77, Issue 1, 1998, Pages 67-83

  Alboni, R B ^a   Frabboanndi, S ^b   Armigllato, A ^a  

^a CNR   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038857074     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619808214231     Document Type: Article

References (28)

1. Armigliato, A., Balboni, R., De Wolf, I., Frabboni, S., Janssens, K. G. F., and Vanhellemont, J., 1993, Microscopy of Semiconducting Materials, Institute of Physics Conference Series No. 134 (Bristol: Institute of Physics), p. 229.
2. Armigliato, A., Balboni, R., and Frabboni, S., 1996, Surface/Interface and Stress Effects in Electronic Material Nanostructures, Materials Research Society Symposium Proceedings, Vol. 405, edited by S. M. Prokes, R. C. Cammarata, K. L. Wang and A. Christou (Pittsburgh, Pennsylvania: Materials Research Society), p. 467.
3. Armigliato, A., Balboni, R., Frabboni, S., Malvezzi, F., and Vanhellemont, J., 1995, Mater. Sci. Technol., 11, 400.
4. Armigliato, A., Govoni, D., Balboni, R., Frabboni, S., Berti, M., Romanato, F., and Drigo, A. V., 1994, Mikrochim. Acta, 114-115, 175.
5. Armigliato, A., Servidori, M., Cembali, F., Fabbri, R., Rosa, R., Corticelli, F., Govoni, D., Drigo, A. V., Mazzer, M., Romanato, F., Frabboni, S., Balboni, R., Iyer, S. S., and Guerrieri, A., 1992, Microsc. Microanal. Microstruct., 3, 363.
6. Balboni, R., and Frabboni, S., 1991, Microsc. Microanal. Microstruct., 2, 617.
7. Bithell, E. G., and Stobbs, W. M., 1989, J. Microsc., 152, 39.
8. Brantley, W. A., 1973, J. app. Pltys., 44, 534.
9. Buxton, B. F., 1976, Proc. R. Soc. A, 350, 335.
10. Corni, F., Frabboni, S., Ottaviani, G., Queirolo, G., Bisero, D., Bresolin, C., Fabbri, R., and Servidori, M., 1992, J. appl. Phys., 71, 2644.
11. Crabbé, E. F., Meyerson, B. S., Stork, M. C., and FIarame, D. L., 1993, Proceedings of the International Electron Device Meeting (IEDM) 83, Piscataway, NJ (The Institute of Electrical and Electronics Engineers).
12. Duan, X. F., 1995, Appl. Phys. Lett., 66, 2247.
13. Iyer, S. S., 1986, Epitaxial Silicon Technology, edited by B. J. Baliga (Orlando, Florida: Academic Press) chap. 2.
14. Jones, P. M., Rackham, G. M., and Steeds, J. W., 1977, Proc. R. Soc. A, 354, 197.
15. Landau, L. D., and Lifshitz, E. M., 1959, Theory of Elasticity (Oxford: Pergamon), chap. 1.
16. Lin, Y. P., Bird, D. M., and Vincent, R., 1989, Ultramicroscopy, 27, 233.
17. Maher, D. M., Fraser, H. L., Humphreys, C. J., Knoell, R. V., and Bean, J. C., 1987, Appl. Phys. Lett., 50, 574.
18. Mansfield, J., Bird, D., and Saunders, M., 1993, Ultramicroscopy, 48, 1.
19. Meyerson, B. S., Uram, K. J., and Le Goues, F. K., 1988, Appl. Phys. Lett., 53, 2555.
20. Mooney, P. M., 1996, Mater. Sci. Engng, R17, 105.
21. Morgenstern, Th., Babanskaya, L, Morgenstern, G., Schmalz, K., Gaworzewski, P., Zaumseil, P., Kruger, D., Tittelback-Helmrich, K., and Kuhne, H., 1993, Solid St. Phenom., 32-33, 409.
22. Peng, L. M., Ren, G., Dudarev, L., and Whelan, M. J., 1966, Acta crystallogr. A, 52, 456.
23. Perovic, D. D., Wheatherly, G. C., and Houghton, D. C., 1991, Phil. mag. A 64, 1.
24. Spence, J. C. H., and Zuo, J. M., 1992, Electron Microdiffraction (New York: Plenum).
25. Stadelmann, P., 1987, Ultramicroscopy, 21, 131.
26. Tang, H. P., Vescan, L., and Luth, H. J., 1992, J. Cryst. Growth, 116, 1.
27. Treacy, M. M. J., and Gibson, J. M., 1986, J. vac. Sci. Technol. B, 4, 1458.
28. Zuo, J. M., 1992, Ultramicroscopy, 41, 211.