Strain characterization of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 97-99

  Armigliato, A ^a   Balboni, R ^a   Frabboni, S ^b   Benedetti, A ^c   Cullis, A G ^c   Carnevale, G P ^d   Colpani, P ^d   Pavia, G ^d  

^a CNR   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; INTERFACES (MATERIALS); STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION; SHALLOW TRENCH ISOLATION STRUCTURES;

SEMICONDUCTING SILICON;

EID: 0035247273     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00146-3     Document Type: Article

References (4)

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3. Balboni R., Frabboni S., Armigliato A. Philos Mag A. 77:1998;67.
4. Vanhellemont J, Janssens KGF, Frabboni S, Smeys P, Balboni R, Armigliato A. MRS Symp Proc, vol. 405, 1996. p. 435.