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Volumn 30, Issue 10, 1999, Pages 877-883

Stress measurements in si microelectronics devices using Raman spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; RAMAN SPECTROSCOPY;

EID: 0005058304     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1097-4555(199910)30:10<877::aid-jrs464>3.0.co;2-5     Document Type: Article
Times cited : (193)

References (22)
  • 9
    • 85153252971 scopus 로고    scopus 로고
    • personal communication
    • M. Ignat, personal communication.
    • Ignat, M.1
  • 12
    • 85153310159 scopus 로고    scopus 로고
    • Dilor confocal laser Raman, Part III: Confocal imagery physical basis
    • Lille, France
    • In Technical Notes from Dilor, Lille, France: 'Dilor confocal laser Raman, Part III: Confocal imagery physical basis'.
    • Technical Notes from Dilor
  • 22
    • 85153244236 scopus 로고    scopus 로고
    • personal communication
    • K. Dombrowski, personal communication.
    • Dombrowski, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.