Calibration of a two-dimensional numerical model for the optimization of LOCOS-type isolations by response surface methodology

IEEE Transactions on Semiconductor Manufacturing

Volumn 13, Issue 4, 2000, Pages 416-426

  Senez, Vincent ^a,b   Hoffmann, Thomas ^b   Tixier, Agnès ^b  

^a IEEE   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LOCAL OXIDATION OF SILICON; MICROELECTRONIC DEVICES; RESPONSE SURFACE METHODOLOGY;

CALIBRATION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MICROELECTRONIC PROCESSING; NUMERICAL METHODS; OPTIMIZATION; OXIDATION; SEMICONDUCTING SILICON; VISCOELASTICITY;

INTEGRATED CIRCUIT TESTING;

EID: 0034313551     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.892627     Document Type: Article

References (17)

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