High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 175-183

  Ronan, B ^b   Voldman, S ^a   Lanzerotti, L ^a   Rascoe, J ^a   Sheridan, D ^a   Rajendran, K ^a  

^a IBM   (United States)

^b PRINCETON UNIVERSITY   (United States)

Author keywords

Boron alloys; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Indium phosphide; Power transmission lines; Semiconductor films; Silicon germanium; Transmission lines

Indexed keywords

BICMOS TECHNOLOGY; ELECTRIC LINES; ELECTRIC POWER TRANSMISSION; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; ELECTROSTATICS; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTIONS; IMPURITIES; INDIUM ALLOYS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SILICON; SILICON ALLOYS; TRANSISTORS;

BORON ALLOYS; CARBON INCORPORATION; EPITAXIAL BASE; GERMANIUM SILICON ALLOY; IMPROVED CONTROLS; SEMICONDUCTOR FILMS; SILICON GERMANIUM; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0141933379     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996632     Document Type: Conference Paper

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